Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-03-07
2009-08-04
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S511000, C257S525000, C257SE27023, C257SE27043
Reexamination Certificate
active
07569903
ABSTRACT:
One embodiment of the invention relates to a component arrangement including a load and an open-load detector. The load transistor has a first transistor region arranged in a semiconductor body, a second transistor region arranged in the semiconductor body and a third transistor region arranged between the first transistor region and the second transistor region and doped in complementary fashion to the first transistor region and the second transistor region. The open-load detector has a sense region arranged in the third transistor region and of conduction type complementary to the third transistor region and having an evaluation circuit connected to the sense region.
REFERENCES:
patent: 5438286 (1995-08-01), Pavlin et al.
patent: 195 20 735 (1996-12-01), None
patent: 101 30 081 (2002-06-01), None
Infineon Technologies AG, “5-V Voltage Regulator,” Data Sheet TLE 4287 G, Rev. 1.3, Jan. 1, 2004, pp. 1-12 (2004).
Bodano Emanuele
Macri Nicola
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies Austria AG
Pham Hoai v
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