Complimentary lateral nitride transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices

Reexamination Certificate

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Details

C257SE27015, C257SE29121, C257SE29262, C257SE21696, C257S341000, C257S342000, C257S330000, C257S333000, C257S331000, C257S347000

Reexamination Certificate

active

11056833

ABSTRACT:
A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.

REFERENCES:
patent: 6800904 (2004-10-01), Fujishima et al.
patent: 2005/0062111 (2005-03-01), Maldei et al.

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