Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2005-04-05
2005-04-05
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S592000
Reexamination Certificate
active
06876060
ABSTRACT:
An NPN transistor having an epitaxial region of an N-type silicon/P-type silicon germanium/N-type silicon structure, and a PNP transistor having an epitaxial region of a P-type silicon/N-type silicon germanium/P-type silicon structure are formed on a silicon substrate after the formation of an element-isolating oxide film. At this time, the concentration distribution of germanium in the base of each of the NPN transistor and the PNP transistor is adjusted to have a peak in the collector side, and to descend toward the emitter side. Since each epitaxial layer is independently grown, the speed performance of each transistor can be adjusted to the ultimate while maintaining practical withstand voltage.
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Burns Doane Swecker & Mathis L.L.P.
Nguyen Cuong
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