Compliant universal substrate for epitaxial growth

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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117 97, 148 33, 216 34, 216 36, 438694, H01L 2100

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active

059814004

ABSTRACT:
Compliant universal (CU) substrates and techniques for forming the same facilitate growth of epitaxial layers comprised of materials which are highly lattice mismatched with the substrate material. The CU substrates employ very thin (e.g., 1-20 nm or less) substrate layers which are loosely bonded to a thick bulk material base layer. Because of the loose bonding, the bonding energy of the atoms in the thin substrate layer is reduced, thus greatly increasing the flexibility of the thin substrate layer. This enables the substrate layer to absorb strain or stress imparted during the growth of lattice mismatched epitaxial layers, thus avoiding the formation of defects in the epitaxial layers. The "loose" bonding of the thin substrate layer to the base layer can be achieved in any of a number of ways. First, the thin substrate layer can be bonded at an angle relative to the base layer so that screw dislocations form which provide the desired reduction in bonding energy and increase in flexibility. Other techniques rely on reducing the top surface area of the base layer to reduce the bonding energy. This can be accomplished by making the base material porous at the top surface, or by patterning or roughing the top surface of the base layer.

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