Complexes having tris (pyrazolyl) borate ligands for forming fil

Semiconductor device manufacturing: process – Repair or restoration

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438602, H01L 2100

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active

061271926

ABSTRACT:
Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

REFERENCES:
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Dutremez et al., "HB(3,5-Me.sub.2 pyrazolyl).sub.3 -as an encapsulating ligand for Ba.sup.II," Journal of Organometallic Chemistry, 462,C1-C2 (1993).
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Macchioni et al., "Cationic Bis-and Tris(.eta.2-(pyrazol-1-y1)methane) Acetyl Complexes of Iron (II) and Ruthenium (II): Synthesis, Characterization, Reactivity, and Interionic Solution Structure by NOESY NMR Spectroscopy," Organometallics, 16, 2139-2145 (1997).
Trofimenko et al., "Boron-Pyrazole Chemistry IV. Carbon-and Boron-Substituted Poly (1-pyrazole) borates," J. Amer. Chem. Soc., 89, 6288-6294 (1967).
Trofimenko et al., "Geminal Poly (1-pyrazolyl) alkalines and Their Coordination Chemistry," J. Amer. Chem. Soc., 92(17), 5118-5127 (1970).
Versteeg et al., "Metalorganic Chemical Vapor Deposition By Pulsed Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide," Journal of the American Ceramic Soc., 78, 2763-2768 (1995).

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