Complex oxide, and production process therefor and...

Details Complex oxide, and production process therefor and... Complex oxide, and production process therefor and...

2007-03-06

2007-03-06

Sample, David (Department: 1755)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C423S594140, C424S059000, C106S419000, C106S426000, C106S431000, C524S492000

Reexamination Certificate

active

10717483

ABSTRACT:
The present invention relates to a complex oxide having a BET specific surface area of about 10 to about 200 m2/g, comprising zinc oxide as a primary component, containing crystalline structures of both zinc oxide and silica, and exhibiting diffraction peaks in lattice planes (100), (002), and (101), which are X-ray crystallographically specific to diffraction peaks of crystalline zinc oxide, and in a lattice plane (101) which is X-ray crystallographically specific to the diffraction peak of crystalline silica.

REFERENCES:
patent: 4207377 (1980-06-01), Kindrick
patent: 6132743 (2000-10-01), Kuroda et al.
patent: 6335002 (2002-01-01), Kogoi et al.

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