Complex opto-isolator with improved stand-off voltage stability

Details Complex opto-isolator with improved stand-off voltage stability Complex opto-isolator with improved stand-off voltage stability

1990-11-13

1992-07-07

Prenty, Mark

357 2, 357 68, H01L 3112, H01L 4500, H01L 2348

Patent

active

051287293

ABSTRACT:
Improved resistance to electrical instability of opto-isolators subjected to large stand-off voltages is obtained by coating the semiconductor light sensing element with a high resistivity layer of amorphous silicon while leaving most of the surface PN junction perimeter and nearby regions free of metal. The amorphous silicon prevents mobile ions in the encapsulation, which are driven to the detector surface by the stand-off voltage, from inverting or modulating the conductivity of the detector surface and causing instability. The amorphous silicon also makes it possible to leave most of the light sensitive PN junctions and nearby regions free of metal, thereby simplifying design of complex IC detector chips and increasing sensitivity.

REFERENCES:
patent: 4495512 (1985-01-01), Isaac et al.

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