Complex coupling MQW semiconductor laser

Details Complex coupling MQW semiconductor laser Complex coupling MQW semiconductor laser

2005-02-01

2005-02-01

Ip, Paul (Department: 2828)

Coherent light generators

Particular resonant cavity

Distributed feedback

C372S045013, C372S046012

Reexamination Certificate

active

06850550

ABSTRACT:
A method of manufacturing a distributed feedback semiconductor laser, has the steps of: growing on a semiconductor substrate a lamination of alternately stacked lower barrier layer and lower well layer having a band gap narrower than the lower barrier layer, to form a lower quantum well structure; growing an intermediate layer on an uppermost lower well layer, the intermediate layer having a band gap broader than the lower well and a thickness thicker than the lower barrier layer; growing on the intermediate layer a lamination of alternately stacked upper well layer and upper barrier layer having a band gap broader than the upper well layer and a thickness thinner than the intermediate layer, to form an upper quantum well structure; forming a mask on the upper quantum well structure, the mask having periodical pattern; by using the mask as an etching mask, etching the upper quantum well structure in a periodical shape by using the intermediate layer as an etching margin layer; and removing the mask. Complex coupling DFB lasers with a small variation in characteristics can be provided.

REFERENCES:
patent: 5208824 (1993-05-01), Tsang
patent: 5452318 (1995-09-01), Makino et al.
patent: 5953361 (1999-09-01), Borchert et al.
Global and Local Effects in Gain-Coupled Multiple-Quantum-Well DFB Lasers, by A. Champagne et al., IEEE J. Quantum Electronics, vol. 35, pp. 1390-1401, 1999.

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