Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-11-07
2006-11-07
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S463000, C257SE31084, C438S070000, C438S075000
Reexamination Certificate
active
07132724
ABSTRACT:
A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor structure substantially below an upper surface thereof and a vertical portion communicating with the upper surface of the semiconductor structure. The complete-charge-transfer detector is disposed within a first charge container forming a potential well around it. The horizontal portion of the complete-charge-transfer detector has a substantially uniform doping density in a substantially horizontal direction and the vertical portion of the complete-charge-transfer detector has a doping density that is a monotonic function of depth and is devoid of potential wells. A first charge-transfer device is disposed substantially at an upper surface of the semiconductor structure and is coupled to the vertical portion of the complete-charge-transfer detector.
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Foveon, Inc.
Kebede Brook
Nguyen Khiem
Sierra Patent Group Ltd.
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