Complementary type MOS field-effect transistor circuit provided

Details Complementary type MOS field-effect transistor circuit provided Complementary type MOS field-effect transistor circuit provided

1984-10-11

1986-10-14

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307585, 307304, 307200B, 361 91, 361 56, 357 42, 357 51, 357 2313, H03K 17687, H02H 320, H02H 900, H01L 2702

Patent

active

046174826

ABSTRACT:
A complementary type MOS field effect transistor circuit includes an input terminal, a P-MOS FET, an N-MOS FET connected in series with the P-MOS FET, a first resistor connected between the input terminal and the gate of the P-MOS FET, a second resistor connected between the input terminal and the gate of the N-MOS FET, a first diode connected between the gate of the P-MOS FET and a high voltage power supply terminal and a second diode connected between the gate of the N-MOS FET and a low voltage power supply terminal. The gate protection circuit of the circuit has a first part of the first resistor and the second diode and a second part of the second resistor and the second diode.

REFERENCES:
patent: 3967295 (1976-06-01), Stewart
patent: 4514646 (1985-04-01), Ando et al.

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