Complementary TFT devices with diode-effect elimination means in

Details Complementary TFT devices with diode-effect elimination means in Complementary TFT devices with diode-effect elimination means in

1995-12-14

1997-04-29

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257350, 257377, 257383, 257384, 257393, 257903, 257904, H01L 2711

Patent

active

056252005

ABSTRACT:
A complementary device consisting of a PMOS TFT transistor and an NMOS FET transistor uses a conducting layer to shunt drain regions of the transistors to eliminate any detrimental diode or p-n junction effects. The use of the conducting layer significantly improves the current drive capabilities of the PMOS TFT when the complementary device is used to design SRAM cells with NMOS pull-down transistors.

REFERENCES:
patent: 5331170 (1994-07-01), Hayashi

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