Complementary silicon-on-insulator lateral insulated gate rectif

Details Complementary silicon-on-insulator lateral insulated gate rectif Complementary silicon-on-insulator lateral insulated gate rectif

1987-10-23

1988-08-02

Edlow, Martin H.

357 234, 357 237, 357 239, 357 38, 357 42, 357 4, H01L 2978

Patent

active

047616792

ABSTRACT:
A complementary Silicon-On-Insulator (SOI) Lateral Insulated Gate Rectifier (LIGR) is fabricated in a monocrystalline silicon layer provided on a major surface of a substantially insulating substrate. The monocrystalline silicon layer includes a number of adjacent, doped coplanar layer portions, with the complementary SOI LIGR device being formed of adjacent, contacting layer portions forming two complementary LIGR elements with a common source region. The common source region, as well as both of the drain regions of the device, are composed of regions of both the first and second conductivity types. In this manner, a simple, easily fabricated, balanced, high performance complementary LIGR structure is obtained in which undesired substrate currents are substantially eliminated.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4224634 (1980-09-01), Svedberg
patent: 4462040 (1984-07-01), Ho et al.
patent: 4546375 (1985-10-01), Blackstone et al.
patent: 4568958 (1986-02-01), Baliga
patent: 4686551 (1987-08-01), Mihara

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