Complementary semiconductor region fabrication

Details Complementary semiconductor region fabrication Complementary semiconductor region fabrication

1990-12-14

1991-12-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 34, 437 59, 437156, 148DIG25, H01L 2122

Patent

active

050700316

ABSTRACT:
A method of forming oppositely doped semiconductor regions includes providing a first semiconductor layer of a first conductivity type and forming a second semiconductor layer of a second conductivity type on a portion of the first layer. A third semiconductor layer is formed on the second layer and the exposed portions of the first layer. The dopant concentration of the third layer is less than the dopant concentration of the second layer so that dopant of the second conductivity type diffuses from the second layer into the portion of the third layer disposed thereabove.

REFERENCES:
patent: 4578128 (1986-03-01), Mundt et al.
patent: 4951115 (1990-08-01), Harame et al.
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 4997776 (1991-03-01), Harame et al.

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