Complementary semiconductor integrated circuit device capable of

Details Complementary semiconductor integrated circuit device capable of Complementary semiconductor integrated circuit device capable of

1988-06-28

1989-09-19

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307542, 307451, 307585, 307246, 357 51, 357 44, H03L 3353

Patent

active

048686271

ABSTRACT:
A complementary semiconductor integrated circuit for absorbing a noise comprises an n-type semiconductor substrate maintained at a supply voltage, a p-type well maintained at the reference voltage potential, an n-type region formed in the n-type semiconductor substrate and connected to the supply voltage, a polysilicon layer formed on the n-type region through an insulating film and connected to the reference voltage, whereby a capacitance is formed by the n-type region and the polysilicon layer formed on the n-type region through the insulating film. A noise included in the supply voltage is absorbed by the capacitance.

REFERENCES:
patent: 4168442 (1979-09-01), Satou
patent: 4682203 (1987-07-01), Konda
Sze, S. M., "Physics of Semiconductor Devices", John Wiley and Sons, New York, 1981, pp. 373-374.

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