Complementary semiconductor device using diamond thin film and t

Details Complementary semiconductor device using diamond thin film and t Complementary semiconductor device using diamond thin film and t

1992-02-18

1994-01-11

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 22, 257348, 257351, 257476, 257485, 257613, 257925, H01L 2701, H01L 2702, H01L 29161

Patent

active

052784304

ABSTRACT:
A complementary semiconductor device incorporating semiconductor composed of diamond. Substantially, diamond is insulative. When both III group elementary atoms and V group elementary atoms are doped into diamond, the doped regions respectively turn into p-type and n-type semiconductors. The embodiment discretely dopes both III group elementary atoms and V group elementary atoms into a layer of diamond thin film to eventually form a complementary semiconductor device. The embodiment forms wiring system inside of the diamond thin film by selectively doping either III group elementary atoms or V group elementary atoms therein without forming wiring system only on the inter-layer insulation film.

REFERENCES:
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 3964942 (1976-06-01), Wang
patent: 4389768 (1983-06-01), Fowler et al.
patent: 4903089 (1990-02-01), Hollis et al.
patent: 4982243 (1991-01-01), Nakahata et al.

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