Complementary semiconductor device having high switching speed a

Details Complementary semiconductor device having high switching speed a Complementary semiconductor device having high switching speed a

1989-05-05

1990-01-09

Mintel, William

357 41, 357 48, 357 49, 357 50, H01L 2702

Patent

active

048931640

ABSTRACT:
A complementary type semiconductor device comprises n-channel FETs and three types of p-channel FETs formed in an n.sup.- -type semiconductor substrate. First p-channel FETs and n-channel FETs, both having deep well regions are used for input/output circuits disposed in peripheral areas of the substrate such that these transistors are connected directly to external circuits through bonding wires and the like. The transistors are seldom disturbed by undesirable noises from the external circuits, and the FETs are thus suitable for preventing the latchup effect of the circuits. The other second p-channel FETS have n-type sub-well regions beneath their gate insulator layers, and thus, have relatively small junction capacitances. These FETs are used in circuits needed for high switching speed and are disposed in the inner area of the substrate. By the selective adoption of the p-channel FETs of two types corresponding to the requirements of the associated circuits, a complementary semiconductor device having a highly reliable operation and a high switching speed is achieved.

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