Complementary semiconductor device

Details Complementary semiconductor device Complementary semiconductor device

1987-08-12

1989-08-29

Wojciechowicz, Edward J.

357 43, 357 44, 357 48, 357 49, 357 50, 357 55, H01L 2702

Patent

active

048622400

ABSTRACT:
A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the well from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

REFERENCES:
patent: 4470062 (1984-09-01), Muramatsu
patent: 4536945 (1985-08-01), Gray et al.
patent: 4571818 (1986-02-01), Robinson et al.

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