Complementary semiconductor device

Details Complementary semiconductor device Complementary semiconductor device

1976-05-25

1977-09-27

Wojciechowicz, Edward J.

357 44, 357 34, 357 49, 357 54, H01L 2906, H01L 2712, H01L 2934, H01L 2702

Patent

active

040515060

ABSTRACT:
A semiconductor device comprising at least a pair of NPN and PNP transistors is improved. This semiconductor device is characterized in that at least one pair of vertical transistors are formed in a semiconductor layer of the second conductivity type formed on a semiconductor substrate of the first conductivity type, the semiconductor layer of the second conductivity type serving as both the collector of one of the transistors and the base of the other and that the transistors are electrically insulated from each other by organic insulator formed on the inorganic insulating film on the semiconductor substrate. Thus, a semiconductor device can be obtained in which PNP transistors having good characteristics such as current amplification factor h.sub.FE and gain-bandwidth product f.sub.T are incorporated in an integrated circuit consisting mainly of NPN transistors.

REFERENCES:
patent: 3893155 (1975-07-01), Ogiue
patent: 3956033 (1976-05-01), Roberson

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