Complementary semiconductor device

Details Complementary semiconductor device Complementary semiconductor device

1987-10-20

1990-12-04

Muson, Gene M.

357 49, 357 59, 357 91, H01L 2702, H01L 2712, H01L 2904

Patent

active

049757571

ABSTRACT:
A complementary semiconductor device includes P- and N-type semiconductor regions separately formed in a semiconductor substrate and having substantially the same concentration of impurities. N-and P-channel type silicon gate field effect transistors are formed in the P-and N-channel type regions, respectively. Gate electrodes of the P-and N-channel type silicon gate field effect transistors are formed by polycrystalline silicons of the same conductivity type. An impurity of the same conductivity type is doped into both the semiconductor regions to provide channel doped regions.

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Lin et al. "Shielded Silicon Gate Complementary MOS Integrated Circuit" IEEE Trans. Electron Devices vol. ED-19 (11/72) pp. 1199-1207.

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