Complementary NPN and PNP lateral transistors separated from sub

Details Complementary NPN and PNP lateral transistors separated from sub Complementary NPN and PNP lateral transistors separated from sub

1987-06-11

1992-03-17

Carroll, J.

357 35, H01L 2972, H01L 2906

Patent

active

050973169

ABSTRACT:
The invention is a pair of complementary transistors or arrays thereof and method for producing same in sub-micron dimensions on a silicon substrate selectively doped P and N type by forming intersecting slots in spaced apart relation across the P substrate regions to define semi-arrays of V shaped intermediate regions which will become transistors. Silicon oxide fills these slots and separates the NPN transistor regions from the substrate. Orthogonal slots devide the semi-arrays into individual transistor active regions which are doped N and introduced into each active regions via the orthogonal slots and driven in to comprise the emitter and collector regions on respective sides of original substrate comprising the base regions. The same construction obtains in the N substrate regions to form the arrays of PNP transistors. Metallization patterns complete electrical interconnections to the emitter, base and collector regions and silicon oxide substantially covers the periphery of each active region for total isolation.

REFERENCES:
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4146905 (1979-03-01), Appels et al.
patent: 4519849 (1985-05-01), Korsh et al.
patent: 4641170 (1987-02-01), Ogura et al.
S. A. Evans et al., "A 1-Micron Bipolar VLSI Technology", IEEE Transactions on Electron Devices, vol. ED-27 (Aug. 1980), pp. 1373-1379.
K. Brack et al., "Lateral Nonuniform Doping of Semiconductor by Ion Implantation", IBM Technical Disclosure Bulletin, vol. 16, No. 10 (Mar. 1974), p. 3287.
K. Sekiyo et al., "Trench Self-Aligned EPROM Technology", 1986 VLSI Symposium (1986), three pages.

Affiliated with

Also associated with

Rating

Complementary NPN and PNP lateral transistors separated from sub does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary NPN and PNP lateral transistors separated from sub, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary NPN and PNP lateral transistors separated from sub will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1480122