Complementary MOSFET device and method of manufacturing the same

Details Complementary MOSFET device and method of manufacturing the same Complementary MOSFET device and method of manufacturing the same

1979-05-23

1981-12-01

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

148175, H01L 2140

Patent

active

043028756

ABSTRACT:
A CMOS device comprising an N type semiconductor substrate, a P type well region diffused in the substrate, an n-channel MOS transistor formed in the P type well region, and a p-channel MOS transistor formed in the N type semiconductor substrate, and a method for manufacturing the CMOS device. In case the CMOS device serves as a CMOS inverter, the source region of the p-channel MOS transistor, the semiconductor substrate and the well layer constitute a parasitic PNP type bipolar transistor, and the source region of the n-channel MOS transistor, the well layer and the semiconductor substrate constitute a parasitic NPN type bipolar transistor. The product of the current amplification factor .beta..sub.1 of the PNP type bipolar transistor and the current amplification factor .beta..sub.2 of the NPN type bipolar transistor is smaller than 1.

REFERENCES:
patent: 3615873 (1971-10-01), Sluss et al.
patent: 3955210 (1976-05-01), Bhatia
patent: 4053925 (1977-10-01), Burr
patent: 4161417 (1979-07-01), Yim et al.

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