Complementary MOS inverter structure

Details Complementary MOS inverter structure Complementary MOS inverter structure

1978-01-30

1979-12-11

Clawson, Jr., Joseph E.

357 23, H01L 2702

Patent

active

041786050

ABSTRACT:
A complementary MOS inverter includes transistors each of which has a dual gate structure with the threshold voltage of the channel nearest the drain of each transistor arranged to be lower than that of the channel nearest the source of each transistor. This arrangement provides the cascode characteristics of dual gate structure, i.e., high breakdown voltage, high voltage gain, low drain output conductance, and relatively fast frequency response, but allows all four gate electrodes of the transistors to be connected in common, thus enabling relatively simple layout.

REFERENCES:
patent: 3436622 (1969-04-01), Warner
patent: 3641405 (1972-02-01), Brown et al.
patent: 3715637 (1973-02-01), Polrier
patent: 3855610 (1974-12-01), Masuda et al.
patent: 3872491 (1975-03-01), Hanson et al.
patent: 3898105 (1975-08-01), Mai et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4078947 (1978-03-01), Johnson et al.

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