Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1977-04-05
1978-09-19
Miller, Jr., Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307303, 307304, 307313, H01L 2704
Patent
active
041157966
ABSTRACT:
Formation of well-regions of a conductivity type opposite to that of a substrate is achieved in such a manner to determine a first threshold voltage level. Ion implantation is effected on desirably selected gates in the respective channels formed on the substrate and the well-regions. Two channels on the ion implanted substrate and on the well-region in which the ion implantation is not effected, are coupled to form a complementary-MOS transistor pair having a first threshold voltage level. The channels on the substrate in which the ion implantation is not effected and on the ion implanted well-region are coupled to form another complementary-MOS transistor pair having a second threshold voltage level.
REFERENCES:
patent: 3851189 (1974-11-01), Moyer
patent: 3868274 (1975-02-01), Hubar et al.
patent: 3919430 (1975-10-01), Heuner et al.
patent: 3958187 (1976-05-01), Suzuki et al.
Swanson et al., "Ion-Implanted Complementary MOS Transistors in Low-Voltage Circuits", IEEE Journal of Solid State Circuits, vol. 7, No. 2, Apr. 1972, pp. 146-152.
Fujimoto Takeo
Ogawa Shin-ichi
Torimaru Yasuo
Yasue Shinya
Davie James W.
Miller, Jr. Stanley D.
Sharp Kabushiki Kaisha
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