Complementary MOS integrated circuit having means for preventing

Details Complementary MOS integrated circuit having means for preventing Complementary MOS integrated circuit having means for preventing

1985-07-30

1987-04-21

Wojciechowicz, Edward J.

357 231, 357 41, 357 45, H01L 2702

Patent

active

046600671

ABSTRACT:
The complementary MOS integrated circuit has a first channel MOS FET in a substrate of one conductivity type and a second channel MOS FET in a well region of the other conductivity type, and further comprises a first high impurity region of the one conductivity type formed in the substrate so as to surround the first channel MOS FET, a second high inpurity region of the other conductivity type formed in the well region so as to surround the second channel MOS FET, a first insulator film covering the first and second high impurity regions and having a plurality of first holes, a first wiring layer formed on the first insulator film with connections with the first high impurity region through the first holes, so as to surround the first channel MOS FET, a second wiring layer formed on the first insulator film with connections with the second high impurity region through the second holes, so as to surround the second channel MOS FET, a second insulator film covering the first and second wiring layers and having a plurality of second holes, a third wiring layer formed on the second insulator film, connected with the first wiring layer through the second holes and supplied with a first power potential, and a fourth wiring layer formed on the second insulator film, connected with the second wiring layer through the second holes and supplied with a second power potential.

REFERENCES:
patent: 4062039 (1977-12-01), Nishimura
patent: 4167747 (1979-09-01), Satou
patent: 4270262 (1981-06-01), Hori et al.

Affiliated with

Also associated with

Rating

Complementary MOS integrated circuit having means for preventing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary MOS integrated circuit having means for preventing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary MOS integrated circuit having means for preventing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-755309