Complementary MOS integrated circuit device

Details Complementary MOS integrated circuit device Complementary MOS integrated circuit device

1990-05-29

1991-07-02

LaRoche, Eugene R.

Fishing, trapping, and vermin destroying

357 59, 357 60, 437 56, 437 83, H01L 2702, H01L 2904

Patent

active

050289764

ABSTRACT:
A complementary MOS integrated circuit device has an MOS transistor of one conductivity type formed on a semiconductor substrate and an MOS transistor of another conductivity type opposite to the one conductivity type formed on the MOS transistor of one conductivity type through a separate layer. A dissimilar material whose nucleation density is sufficiently larger than that of the material of the separate layer and which is fine enough so that only a single nucleus of a semiconductor layer material grows is provided on the separate layer. The MOS transistor of the opposite conductivity type is formed in a monocrystalline semiconductor layer or substantial monocrystalline semiconductor layer provided by growing around the single nucleus formed on the hetero material.

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Epitaxial Lateral Overgrowth of Silicon Over Steps of Thick SiO.sub.2, Zingg et al., Jun. 1981.
The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates, W. Claassen et al., Jun. 1981.
Orientation Controlled SOI by Line-Shaped Laser-Beam Seeded Lateral Epitaxy for CMOS Stacking, M. Ohkura et al., Aug. 1981.

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