Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-06-17
1997-11-11
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257281, 257192, H01L 2980, H01L 3112, H01C 310328, H01C 310336
Patent
active
056867441
ABSTRACT:
Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.
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Meier Stephen
Northern Telecom Limited
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