Complementary metal oxide semiconductors address drive circuit

Details Complementary metal oxide semiconductors address drive circuit Complementary metal oxide semiconductors address drive circuit

1982-06-21

1984-05-01

Moffitt, James W.

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365104, 365185, G11C 800

Patent

active

044465360

ABSTRACT:
An address drive circuit for use on programmable, nonvolatile, semiconductor memories which use either Metal Nitrite Oxide Semiconductor (MNOS) or "floating gate" transistors for Electrically Erasable Programmable Read Only Memory Storage (EEPROMS). The inventive drive circuit is based on the use of prior art high voltage Complementary Metal Oxide Semiconductors (CMOS) transistors which have junction diode breakdown limits exceeding the maximum "device drain voltage" (V.sub.DD) to be switched. This circuit has negligible direct current power dissipation, high speed memory read/write capability, and requires minimum physical installation area.

REFERENCES:
patent: 4099264 (1978-07-01), Lodi
patent: 4144587 (1979-03-01), Miyakawa et al.

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