Complementary metal oxide semiconductor voltage controlled...

Details Complementary metal oxide semiconductor voltage controlled... Complementary metal oxide semiconductor voltage controlled...

2007-10-30

2007-10-30

Chang, Joseph (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S167000, C331S1170FE

Reexamination Certificate

active

11355976

ABSTRACT:
A complementary metal oxide semiconductor voltage controlled oscillator is provided. The voltage controlled oscillator includes an LC tank which is supplied with a power supply voltage, the LC tank oscillating at a certain frequency; a negative resistor including first and second N-channel metal oxide semiconductor field effect transistors (NMOS FETs) to sustain the oscillation of the LC tank; a direct current block to remove a direct current component from the power supply voltage; an alternating current block to apply an alternating current voltage to the gates of the first and second NMOS FETs; a first current mirror including third and fourth NMOS FETs and allowing a current to symmetrically flow in the voltage controlled oscillator, a drain and the gate of the third NMOS FET being connected to a reference voltage supply; and the reference voltage supply applying a direct current voltage to the first current mirror.

REFERENCES:
patent: 6411171 (2002-06-01), Itoh
patent: 6469586 (2002-10-01), Rogers et al.
patent: 6469587 (2002-10-01), Scoggins
patent: 6750726 (2004-06-01), Hung et al.
patent: 6774736 (2004-08-01), Kwek et al.
patent: 6867658 (2005-03-01), Sibrai et al.

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