Complementary metal-oxide-semiconductor transistor and one-capac

Details Complementary metal-oxide-semiconductor transistor and one-capac Complementary metal-oxide-semiconductor transistor and one-capac

1989-10-27

1990-05-22

Hearn, Brian E.

Stock material or miscellaneous articles

Two dimensionally sectional layer

Sections connected flexibly with external fastener

437 38, 437 47, 437 60, 437203, 437228, 437919, 437915, H01L 21265, H01L 2710

Patent

active

049277790

ABSTRACT:
A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.

REFERENCES:
patent: 4489478 (1984-12-01), Sakurai
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4630088 (1986-12-01), Ogura et al.
patent: 4646731 (1987-04-01), Lam et al.
patent: 4651408 (1987-03-01), MacElwee
patent: 4670768 (1987-02-01), Sunami et al.
patent: 4772568 (1988-09-01), Jastrzebeski
Nicky C. C. Lu, "Advanced Cell Structures for Dynamic RAMs", IEEE Circuits and Devices Magazine, vol. 5, No. 1, Jan. 1989, pp. 27-34.

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