Complementary metal oxide semiconductor image sensor having...

Details Complementary metal oxide semiconductor image sensor having... Complementary metal oxide semiconductor image sensor having...

2004-10-01

2009-11-03

Epps, Georgia Y (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S216000

Reexamination Certificate

active

07612318

ABSTRACT:
Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same, which are capable of effectively preventing a cross talk effect. The CMOS image sensor includes a semiconductor substrate; device isolation regions provided on the semiconductor for defining device regions therebetween; photocharge generating portions provided on the device regions for receiving external light and for generating and storing electric charges; light concentrating portions provided over the photocharge generating portions for concentrating the external light onto corresponding photocharge generating portions; and cross talk preventing portions for preventing the light passing through the light concentrating portions from being incident onto adjacent photocharge generating portions.

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