Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-12-20
2008-09-23
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S069000, C257S088000, C257S089000, C257S091000, C257S098000, C257S431000, C257S432000, C257S434000, C257S435000, C257S436000
Reexamination Certificate
active
07427799
ABSTRACT:
A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a planarization layer on the color filter layers, and having first micro-lens by intaglio in correspondence with the respective photosensitive patterns to condense the light secondly; and a plurality of second micro-lens layers on the planarization layer in correspondence with the respective photosensitive devices, to condense the light firstly.
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Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Soward Ida M
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