Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-07-17
2007-07-17
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S073000, C438S294000, C438S526000, C257SE31001
Reexamination Certificate
active
10901384
ABSTRACT:
A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color filter, thereby preventing a back bias voltage from influencing a transistor formed on the outside of a photodiode in a CMOS image sensor sensing optical color sensitivity of light rays irradiated to the photodiode. The CMOS image sensor includes a first conductive semiconductor substrate having a first region for forming a photodiode and a second region for forming transistors and having a back bias voltage for varying a width of a depletion area in the first region applied thereon, a plurality of transistors formed in the second region of the semiconductor substrate, a photodiode formed in the first region of the semiconductor substrate, a second conductive buried layer formed in the second region of the semiconductor substrate, so as to prevent the back bias voltage from influencing the transistors, and a first isolating barrier formed within the semiconductor substrate, so as to surround a side portion of the second region.
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Search Report from the European Patent Office, dated Jun. 9, 2006, in counterpart European Patent Application No. 04016939.3-2203.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Mulpuri Savitri
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