Complementary metal-oxide semiconductor high-frequency ring osci

Details Complementary metal-oxide semiconductor high-frequency ring osci Complementary metal-oxide semiconductor high-frequency ring osci

1999-03-11

2000-08-01

Grimm, Siegfried H.

Oscillators

Ring oscillators

331 45, 331177R, H03B 502, H03K 3354

Patent

active

060972564

ABSTRACT:
A CMOS (complementary metal-oxide semiconductor) high-frequency ring oscillator is provided for generating an output frequency in response to a control voltage in a wide bandwidth. The ring oscillator is of the type including a plurality of cascaded delay circuits, such as CMOS CSL (common-sense logic) inverters. The ring oscillator is characterized by the additional incorporation of each of the CMOS CSL inverters with either a positive-feedback gate structure or a positive-feedback drain structure so as to improve the output-to-output characteristics of the ring oscillator. More specifically, the ring oscillator is still operable to output an oscillating signal even though the control voltage is reduced to below a certain level, at which point the gain is still larger than 1. The ring oscillator is therefore more advantageous than the prior art both in gain and output-to-output characteristics and is operable over a wide variety of output frequencies, particularly in the low-frequency regions.

REFERENCES:
patent: 5426398 (1995-06-01), Kuo
patent: 5963101 (1999-10-01), Iravani

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