Complementary metal-oxide-semiconductor field effect transistor

Details Complementary metal-oxide-semiconductor field effect transistor Complementary metal-oxide-semiconductor field effect transistor

2007-01-19

2008-08-12

Lateef, Marvin M. (Department: 4146)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

C257S546000, C257S545000

Reexamination Certificate

active

07411271

ABSTRACT:
A complementary metal-oxide-semiconductor field effect transistor (CMOSFET) is provided. The CMOSFET includes a substrate of a first conductivity type, a first epitaxial layer, a well, a second epitaxial layer of a second conductivity type, a first sinker, a second sinker, a first buried layer and a second buried layer. The first and the second epitaxial layer are sequentially disposed on the substrate. The first sinker and the first buried layer separate a first region from the second epitaxial layer. The second sinker and the second buried layer separate a second region from the second epitaxial layer. The well is disposed in the first region. A first transistor is disposed in the well. A second transistor is disposed in the second region. A deep trench isolation is disposed between the first and the second region and extends from the substrate to the upper surface of the second epitaxial layer.

REFERENCES:
patent: 3648128 (1972-03-01), Kobayashi
patent: 3649887 (1972-03-01), Keller et al.
patent: 3931634 (1976-01-01), Knight
patent: 4027365 (1977-06-01), Froeliger
patent: 4466011 (1984-08-01), Van Zanten
patent: 4890149 (1989-12-01), Bertotti et al.
patent: 5021860 (1991-06-01), Bertotti et al.
patent: 5243214 (1993-09-01), Sin et al.
patent: 5495123 (1996-02-01), Canclini

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