Complementary metal-oxide-semiconductor field effect...

Details Complementary metal-oxide-semiconductor field effect... Complementary metal-oxide-semiconductor field effect...

2006-10-10

2006-10-10

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S369000, C438S199000

Reexamination Certificate

active

07119381

ABSTRACT:
A complementary metal-oxide-semiconductor field effect transistor structure includes ion implants in only one of the two complementary devices. The transistor structure generally includes a compound semiconductor substrate and an epitaxial layer structure that includes one or more donor layers that establish a conductivity type for the epitaxial layer structure. The ion implants function to “invert” or “reverse” the conductivity type of the epitaxial layer structure in one of the complementary devices. In the example embodiment, p-type acceptor implants are utilized in the p-channel device, while the n-channel device remains implant-free.

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patent: 2004/0137673 (2004-07-01), Passlack et al.

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