Complementary metal-oxide semiconductor

Details Complementary metal-oxide semiconductor Complementary metal-oxide semiconductor

1979-12-10

1981-09-08

Edlow, Martin H.

357 41, 357 23, 357 48, 357 89, H01L 2702

Patent

active

042888042

ABSTRACT:
A complementary metal-oxide semiconductor comprises at least one P channel MOSFET and at least one N channel MOSFET. In the semiconductor at least one additional doped portion is formed close to at least one of the P and N channel MOSFETs at a small part of the region which is driven by the voltage supply. The additional doped portion is directly connected to the voltage supply.

REFERENCES:
patent: 3955210 (1976-05-01), Bhatia
patent: 4161417 (1979-07-01), Yim
patent: 4167747 (1979-09-01), Saton
patent: 4173767 (1979-11-01), Stevenson

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