Complementary metal electrode semiconductor device

Details Complementary metal electrode semiconductor device Complementary metal electrode semiconductor device

1988-12-05

1990-08-21

James, Andrew J.

357 15, 357 2312, 357 22, H01L 2980

Patent

active

049511149

ABSTRACT:
A semiconductor device referred to as complementary metal electrode semiconductor (CMES) has p-type and n-type silicon MESFETs interconnected on a substrate with an n-type barrier enhancement implanted into the p-channel of the p-type MESFET. The structure and method of fabrication are provided for forming a CMES logic inverter which has characteristics of very low power, low voltage, low noise and high speed.

REFERENCES:
Glasser and Dobberpuhl, "The Design and Analysis of VLSI Circuits", Addison-Wesley Publish. Co., Reading, Mass. 1985, pp. 226.
Sze, "Physics of Semiconductor Devices", John Wiley & Sons, New York, 1981, pp. 293-297.

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