Complementary lateral insulated gate rectifiers with matched "on

Details Complementary lateral insulated gate rectifiers with matched "on Complementary lateral insulated gate rectifiers with matched "on

1986-12-22

1987-12-08

Clawson, Jr., Joseph E.

357 2314, 357 38, 357 39, 357 42, 357 43, 357 86, H01L 2978

Patent

active

047121246

ABSTRACT:
A complementary Lateral Insulated Gate Rectifier (LIGR) includes two complementary LIGR structures fabricated in adjacent surface-adjoining semiconductor wells of the same conductivity type in a semiconductor substrate. The two LIGR structures are of generally similar configuration, thus simplifying the manufacturing process, and the proposed design additionally permits the n-channel and p-channel LIGR structures to have comparable "on" resistances. The two LIGR structures, otherwise isolated by a portion of the substrate separating the two semiconductor wells, are connected together by a common source electrode. The resulting complementary Lateral Insulated Gate Rectifier features a compact, integrated structure in which the "on" resistances of both the n-channel and p-channel portions of the device are comparable.

REFERENCES:
patent: 4609929 (1986-09-01), Jayaraman et al.
patent: 4626879 (1986-12-01), Colak
patent: 4631565 (1986-12-01), Tihanyi
patent: 4639761 (1987-01-01), Singer et al.

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