Complementary junction-narrowing implants for ultra-shallow...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant

Reexamination Certificate

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Details

C257S463000, C257S465000, C257S545000, C257S548000, C438S305000, C438S390000, C438S395000, C438S252000

Reexamination Certificate

active

10942607

ABSTRACT:
Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two species effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing.

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“Counterdoped Very Shallow p+
Junctions Obtained by B and Sb Implantation and Codiffusion in Si”, Solmi Sandro, Journal of Applied Physics, American Institute of Physics, New York, vol. 83, No. 3, pp. 1742-1747.

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