Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Reexamination Certificate
2008-03-18
2008-03-18
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
C257S463000, C257S465000, C257S545000, C257S548000, C438S305000, C438S390000, C438S395000, C438S252000
Reexamination Certificate
active
10942607
ABSTRACT:
Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two species effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing.
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“Counterdoped Very Shallow p+
Junctions Obtained by B and Sb Implantation and Codiffusion in Si”, Solmi Sandro, Journal of Applied Physics, American Institute of Physics, New York, vol. 83, No. 3, pp. 1742-1747.
Butler Stephanie W.
Jain Amitabh
Brady III Wade James
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Thanh Y.
Tung Yingsheng
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