Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Reexamination Certificate
2008-03-18
2008-03-18
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
C257S463000, C257S465000, C257S545000, C257S548000, C438S305000, C438S390000, C438S395000, C438S252000
Reexamination Certificate
active
07345355
ABSTRACT:
Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two species effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing.
REFERENCES:
patent: 5767574 (1998-06-01), Kim et al.
patent: 5793090 (1998-08-01), Gardner et al.
patent: 5825066 (1998-10-01), Buynoski
patent: 5972783 (1999-10-01), Arai et al.
patent: 6069062 (2000-05-01), Downey
patent: 6087247 (2000-07-01), Downey
patent: 6180476 (2001-01-01), Yu
patent: 6255173 (2001-07-01), Jang
patent: 6265255 (2001-07-01), Hsien
patent: 6355543 (2002-03-01), Yu
patent: 6358823 (2002-03-01), Krueger et al.
patent: 6534373 (2003-03-01), Yu
patent: 2001/0041432 (2001-11-01), Lee
patent: 2003/0179343 (2003-09-01), Marechal et al.
“Counterdoped Very Shallow p+
Junctions Obtained by B and Sb Implantation and Codiffusion in Si”, Solmi Sandro, Journal of Applied Physics, American Institute of Physics, New York, vol. 83, No. 3, pp. 1742-1747.
Butler Stephanie W.
Jain Amitabh
Brady III Wade James
Smith Zandra V.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Thanh Y.
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