Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-05-27
1995-12-26
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, H01L 310378, H01L 31072
Patent
active
054790336
ABSTRACT:
A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.
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Baca Albert G.
Drummond Timothy J.
Robertson Perry J.
Zipperian Thomas E.
Cone Gregory A.
Fahmy Wael M.
Hohimer John
Sandia Corporation
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