Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-11-23
2000-09-26
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257 72, 257351, H01L 2976
Patent
active
061246034
ABSTRACT:
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs.
REFERENCES:
patent: 4942441 (1990-07-01), Konishi et al.
patent: 5148244 (1992-09-01), Iwasaki
patent: 5153702 (1992-10-01), Aoyama et al.
patent: 5243202 (1993-09-01), Mori et al.
patent: 5250931 (1993-10-01), Misawa et al.
patent: 5430320 (1995-07-01), Lee
patent: 5514879 (1996-05-01), Yamazaki
patent: 5616935 (1997-04-01), Koyama et al.
Koyama Jun
Takemura Yasuhiko
Hardy David
Peabody LLP Nixon
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Complementary integrated circuit having N channel TFTs and P cha does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Complementary integrated circuit having N channel TFTs and P cha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary integrated circuit having N channel TFTs and P cha will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2102223