Complementary integrated circuit device equipped with latch-up p

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

3072963, 3073031, 3074821, 357 45, 357 68, 364200, 3642328, H01L 27092

Patent

active

050236890

ABSTRACT:
A complementary integrated circuit device is disclosed which includes a semiconductor substrate having a first area in which a plurality of first transistors are formed and a second area in which a plurality of second transistors are formed, each of the first transistors being larger in size than each of the second transistors. A guard ring region is formed in the substrate to surround the first area. The guard ring region is supplied with a power voltage via a first conductor line which is formed separately from a second conductor line supplying the power voltage to each of the first transistors.

REFERENCES:
patent: 3955210 (1976-05-01), Bhetia et al.
patent: 4656370 (1987-04-01), Kanuma

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