Complementary insulated gate field effect transistor structure a

Details Complementary insulated gate field effect transistor structure a Complementary insulated gate field effect transistor structure a

1976-01-16

1977-06-07

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 42, 357 90, B01J 1700

Patent

active

040273806

ABSTRACT:
A complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate and a process for fabricating the structure incorporate oxide isolation of the active device regions, counterdoping of the p-well with impurities of opposite type to obtain a composite doping profile, reduction of Q.sub.ss in the isolation oxide, doping of the gate and field oxides with a chlorine species and phosphorus doping of the polycrystalline silicon gates.

REFERENCES:
patent: 3328210 (1967-06-01), McCaldin
patent: 3798079 (1974-03-01), Chu
patent: 3921283 (1975-11-01), Shappir
IBM Technical Disclosure Bulletin, "Stacking Fault Free Epitaxial Layers," by Edel, p. 1654, vol. 14, No.5, Oct. 1971.

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