Complementary insulated-gate field effect transistor integrated

Details Complementary insulated-gate field effect transistor integrated Complementary insulated-gate field effect transistor integrated

1988-03-21

1989-09-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 46, 437 57, 437152, 437162, 357 42, H01L 21225, H01L 21265, H01L 2704, H01L 2978

Patent

active

048660027

ABSTRACT:
In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.

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