Complementary high performance cam cell

Details Complementary high performance cam cell Complementary high performance cam cell

1986-12-29

1988-10-18

Fears, Terrell W.

Static information storage and retrieval

Associative memories

Ferroelectric cell

365156, 365190, G11C 1500, G11C 1100, G11C 700

Patent

active

047792264

ABSTRACT:
Static content addressable memory cells (CAMs) combining six transistors and two pairs of control signal lines, where both pairs of lines provide dual functions and where the content addressing function is provided by a unique combination of control and precharge signals on the four control signal lines. An alternate CAM embodiment comprising eight transistors and an additional interrogation signal line is also disclosed. The disclosed content addressable memory cells are preferably implemented by complementary metal oxide field effect transistors (CMOSFETs) and have particular application in very large scale integrated (VLSI) chips, where small cell size is of high importance and/or where high operational speed, reliability, radiation hardness and/or noise immunity, and/or operation at high temperatures and/or a large supply voltage range is required.

REFERENCES:
patent: 3521242 (1967-05-01), Katz
patent: 3633182 (1969-08-01), Koo
patent: 4112506 (1978-09-01), Zibu
patent: 4660177 (1987-04-01), O'Connor

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