Complementary heterostructure field effect transistors

Details Complementary heterostructure field effect transistors Complementary heterostructure field effect transistors

1990-09-14

1993-05-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257195, 257274, 257279, 257369, 437160, H01L 29161, H01L 2702, H01L 21225

Patent

active

052142981

ABSTRACT:
Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p.sup.+ gate (50) formed by diffusion of dopant to convert n.sup.+ gate material to p.sup.+, and a pulse-doped layer adjacent the two-dimensional carrier gas channels to adjust threshold voltages. Further preferred embodiments have the conductivity-type converted gate (50) containing a residual layer of unconverted n.sup.+ which cooperates with the pulse-doped layer threshold shifting to yield threshold voltages which are small and positive for n-channel and small and negative for p-channel devices.

REFERENCES:
patent: 4605945 (1986-08-01), Katayama
IBM Technical Disclosure Bulletin by Tang vol. 27, #9, pp. 5064-5066 Feb. 1985.

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