Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-08-29
1999-03-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257369, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
058834044
ABSTRACT:
A complementary heterojunction semiconductor device (10) has a first resonant interband tunneling transistor (12) coupled to a second resonant interband tunneling transistor (14) through a common output (16). The first transistor (12) has a first gate (18) of a first semiconductor type and a drain (28) coupled to the first gate (18). The first gate (18) is also coupled to the common output (16). The second transistor (14) has a second gate (32) of a second semiconductor type and a source (42) coupled to the second gate (32). The second gate (32) is also coupled to the common output (16). The valence band (60,80,82) of the first semiconductor type has an energy level greater than the conduction band (62,64,84) of the second semiconductor type.
REFERENCES:
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4882608 (1989-11-01), Smith, III
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5142349 (1992-08-01), Zhu et al.
patent: 5349214 (1994-09-01), Tehrani et al.
Goronkin Herbert
Shen Jun
Tehrani Saied Nikoo
Koch William E.
Meier Stephen D.
Motorola Inc.
Parsons Eugene A.
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