Complementary heterojunction field effect transistor with an ani

Details Complementary heterojunction field effect transistor with an ani Complementary heterojunction field effect transistor with an ani

1990-09-18

1991-10-22

Hille, Rolf

357 16, H01L 2980

Patent

active

050600311

ABSTRACT:
A GaAs complementary HFET structure having an anisotype layer formed underneath the P-channel device gate is provided. The anisotype layer is heavily doped N-type and is formed in contact with a semi-insulating AlGaAs barrier of the P-channel FET. A pre-ohmic layer is formed over the anisotype layer and a gate electrode is formed over the pre-ohmic layer. In a first embodiment, the pre-ohmic layer comprises undoped gallium arsenide amd the gate electrode forms a Schottky diode with the pre-ohmic layer. The anisotype layer forms a semiconductor junction with the semi-insulating AlGaAs barrier wherein the semiconductor junction replaces or augments a conventional Schottky junction. In a second embodiment, the pre-ohmic layer comprises heavily doped InGaAs and the gate electrode forms an ohmic contact to the doped InGaAs. The semiconductor junction at the P-channel device gate results in higher built in potential barrier and improved P-channel gate turn on voltage.

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IEEE Electron Device Letters, vol. 11. No. 1, Jan. 1990, "An Anisotype GaAs/InxGa1-xAs Heterojunction Field-Effect Transistor Digital Logic Applications", by Lin et al., 30-31.
IEEE Transactions on Electron Devices, vol. 37, No. 6, Jun. 1990, "High-Performance Self-Aligned p+
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