Complementary field effect transistors having strained superlatt

Details Complementary field effect transistors having strained superlatt Complementary field effect transistors having strained superlatt

1990-08-06

1992-10-13

Prenty, Mark V.

357 61, 357 16, 357 4, H01L 2702, H01L 29161, H01L 2712

Patent

active

051555719

ABSTRACT:
The carrier mobilities for both electrons and holes in complementary field effect transistor structures such as CMOS and CMOD devices are increased by using strained Ge.sub.x Si.sub.1-x /Si layers for the carrier conduction channels. The carrier mobilities for the holes and electrons can be of substantially the same magnitude which is advantageous for complementary logic applications. The complementary FET structures can be advantageously employed with bipolar devices in integrated circuits.

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Applied Physics Letters, vol. 53, #3, pp. 204-206 by Rhee et al., Jul. 18, 1988.
Thin Solid Films, 183, pp. 57-63 by Arbet et al., 1989.
IBM Technical Disclosure Bulletin, vol. 28, #2, p. 500, Jul. 1985 "Germanium P-Channel MOSFET".

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